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SFF2001G PDF Datasheet瀏覽和下載

型號:
SFF2001G
PDF下載:
下載PDF文件 在線瀏覽文檔
內容描述:
[20.0 Amperes Insulated Dual Common Cathode Super Fast Recovery Rectifiers]
文件大小:
1658 K
文件頁數:
2 Pages
品牌Logo:
品牌名稱:
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]



 瀏覽型號SFF2001G的Datasheet PDF文件第2頁 
SFF2001G thru SFF2008G
Pb Free Plating Product
SFF2001G thru SFF2008G
Pb
20.0 Amperes Insulated Dual Common Cathode Super Fast Recovery Rectifiers
Application
Mechanical Data
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.90 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
Features
Super fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220AB/TO-220F-3L
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "G"
Suffix "GA"
Doubler
Tandem Polarity
Suffix "GD"
Series
Tandem Polarity
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
SFF
PARAMETER
SYMBOL 2001
G
SFF
2002
G
SFF
2003
G
SFF
2004
G
SFF
2005
G
SFF
2006
G
SFF
2007
G
SFF
2008 UNIT
G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@ 10 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
(Note 1)
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
50
35
50
100
70
100
150
105
150
200
140
200
20
150
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
0.975
10
400
35
90
2.5
- 55 to +150
- 55 to +150
1.3
1.7
V
μA
ns
pF
°C/W
°C
°C
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
Rev.08T
? 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
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